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APPLICATION NOTE
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
ECO7904
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Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
CONTENTS 1 2 3 4 5 6 7 8 ABSTRACT INTRODUCTION DESIGN OF THE AMPLIFIER ADJUSTMENTS OF THE AMPLIFIER ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA MEASURED RESULTS CONCLUSION REFERENCES
Application Note ECO7904
1998 Mar 23
2
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
1 ABSTRACT
Application Note ECO7904
For application in driver or final stages of TV-transposers in band III (174 - 230 MHz) a linear wideband power amplifier has been designed with 2 transistors BLV33, coupled by means of 3 dB -90 hybrids. Each transistor is adjusted in class-A at VCE = 25 V and IC = 3.25 A. A demonstration model showed a peak sync output power of 40 W at a 3-tone I.M. distortion between -56 and -58 dB. At this power level the cross-modulation varied from 6 to 7.5%. The power gain is between 8.35 and 8.6 dB. 2 INTRODUCTION
For application in T.V. transposers and transmitters for band III a wideband linear power amplifier has been designed with 2 transistors BLV33, coupled by means of 3 dB -90 hybrids. Each transistor is adjusted in class-A at VCE = 25 V and IC = 3.25 A. 3 DESIGN OF THE AMPLIFIER
For class-A operation the BLV33 is specified at VCE = 25 V, IC = 3.25 A. The corresponding typical gain, input and load impedance are given below: Table 1 FREQ. (MHz) 174 202 230 GAIN (dB) 11.3 10.1 9.08 INPUT IMPEDANCE () 0.68 + j1.20 0.68 + j1.43 0.68 + j1.64 LOAD IMPEDANCE () 2.70 + j1.19 2.30 + j0.87 1.99 + j0.52
A computer-aided circuit design, carried out by Mr. Hilbers (Central Application Laboratory) indicated a gain of 9.1 dB 0.1 dB and V.S.W.R. figures of 4.3 (170 MHz), 2.78 (202 MHz) and 1.18 at 230 MHz for a single amplifier. To obtain a high linear output and at the same time good input and output matching (V.S.W.R. 1.2) 3 dB -90 hybrids are used. The reflected input power will be absorbed in the 50 resistor, matching the isolated port (see Fig.1). There are some small differences (value and place of chip capacitors) between the theoretical design and practical circuit. For detailed information on computer-aided design see Refs 1 and 2. Mainly due to the insertion loss of the 3 dB hybrids the gain drops from 9 to 8.5 dB. The transistors used in this particular amplifier are typical products, measured in a narrow band test amplifier and specified as follows: VCE = 25 V - IC = 3.25 A - Th = 70 C
1998 Mar 23
3
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Table 2 Transistor type Batch no. Vision frequency Output power (peak sync) Intermodulation product Gain 4 ADJUSTMENTS OF THE AMPLIFIER 22.9 W -55 dB 9.03 dB MD 8-14 no 5 224.25 MHz BLV33
Application Note ECO7904
MD 8-14 no 10 22.6 W -55 dB 9.11 dB
The amplifier consists of two equal BLV33 branches (see Fig.1) and both transistors are separately biased at VCE = 25 V, IC = 3.25 A. A schematic diagram and lay-out of the bias unit is given in Fig.2. Each branch was adjusted for maximum and flat gain by means of a high power sweep with a frequency range from 170 to 230 MHz. The output power of the amplifier was levelled at 40 W which means about 50% of the D.C. input power. After that, both branches are coupled by means of 3 dB -90 hybrids, input and output matching of the complete amplifier are adjusted below a V.S.W.R. of 1.2 with the aid of capacitors C1-C2-C37-C38 as shown in Fig.1. 5 ASSEMBLING OF THE AMPLIFIER AND MECHANICAL DATA
Due to the dimensions of the p.c. board (220 x 210 mm) 2 extruded blackened aluminium heatsinks (cat. no. 56293) are screwed together. The transistors are screwed on an aluminium plate (thickness 12 mm) which on its turn is screwed on the heatsink. Special attention has been paid to the surface finishing to keep the thermal resistance as low as possible. Figure 3 showed the p.c. board and lay-out of the amplifier. Dimensions: l = 224 mm - w = 223 mm - h = 113 mm. Weight: 7.5 kg. 6 MEASURED RESULTS
Table 3 Frequency range Output power (peak sync) I.M. distortion Cross modulation Output power for 1 dB gain compression Gain at 40 W output level Input and output V.S.W.R. Ambient temp. Heatsink temp. Transistor stud temp. Notes 1. Vision carrier -8 dB, sound carrier -7 dB, side signal -16 dB, zero dB corresponds to peak sync level; fsound = fvision + 5.5 MHz, fsideband = fvision - 1 MHz to fvision + 6 MHz. 2. Vision carrier 0 dB, sound carrier -7 dB: voltage variation of sound carrier (%) when the vision carrier is switched from -20 dB to 0 dB; fsound = fvision + 5.5 MHz. 30 W -60 dB 3% 170 to 230 MHz 40 W -56 dB 6/7.5% 100 W 8.5 dB 0.1 dB 1.2 25 C 65 C 85 C 50 W -54 dB; note 1 10/15.5%; note 2
1998 Mar 23
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Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Application Note ECO7904
In Fig.4 the typical results of crossmodulation and intermodulation measurements on a demonstration amplifier have been given. Figures 5 and 6 show the S-parameters of the complete amplifier. The measuring set-up is depicted in Fig.7. 7 CONCLUSION
Two transistors BLV33, coupled by means of 3 dB -90 hybrids, can deliver an output power of typ. 40 W with an associated gain of 8.5 dB. Required D.C. input power approx. 165 W. Using a high power sweep with adjustable transistor output power levelling provides a suitable method to adjust a linear wideband power amplifier. 8 REFERENCES
Ref. 1: G.L. Matthaei - Tables of Chebyshev Impedance Transforming Networks of Low-Pass Filter Form. Proceedings of the IEEE August 1964, pp. 939 - 963. Ref. 2: A.H. Hilbers and M.J. Koppen - A wide-band linear power amplifier (470 - 860 MHz) with two transistors BLW34. C.A.B. report ECO7901.
1998 Mar 23
5
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C5 C3 L1 C9 L4 C6 C1 input 50 in H1 iso C2 R1 R2 C7 C4 L2 -90 0 0 C10
Philips Semiconductors
handbook, full pagewidth
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Vb R3 C13 C19
Vc
C25 C26 C27
L3
,,,, ,,,,,, ,,,, ,,,,,,
L9 C14 C21 C31 L7 L10 L13 L15 L17 L19 L21 BLV33 C15 C22 C32
C35 R5 -90 H2 in C38 C36 output 50 iso R6 C37
6
C8
,,,, ,,,,,, ,,,, ,,,,,,
C11 C16 C23 C33 L5 L8 L11 L14 L16 L18 L20 L22 BLV33 C12 C17 C24 C34 L12 L6 C28 C18 C29 R4 C20 C30 Vb Vc
MGP988
Application Note ECO7904
Fig.1 Band III Class A linear power amplifier (170 - 230 MHz).
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Table 4 Parts list: Band III class A linear power amplifier (170 - 230 MHz) C1 = C38 C2 = C3 = C4 = C37 C5 = C8 = C32 = C33 C6 = C7 = C35 = C36 C9 = C10 = C11 = C12 C13 = C18 = C27 = C28 C14 = C15 = C16 = C17 C19 = C20 = C26 = C29 C21 = C23 C22 = C24 C25 = C30 C31 = C34 R1 = R2 = R5 = R6 R3 = R4 H1 = H2 L1 = L2 L3 = L6 L4 = L5 L7 = L8 L9 = L12 L10 = L11 L13 = L14 L15 = L16 L17 = L18 L19 = L20 L21 = L22 22 nH 20 nH 1.5 pF 5.6 pF 1.8 to 10 pF 220 pF 18 pF 1000 pF 100 pF 330 nF 68 pF 56 pF 10 F (40 V) 22 pF 100 10 3 dB -90 25 nH 90 nH chip capacitor chip capacitor film dielectric trimmer (cat. no. 222280905002) chip capacitor chip capacitor chip capacitor chip capacitor
Application Note ECO7904
metallized film capacitor (cat. no. 222235225334) chip capacitor chip capacitor electrolytic capacitor (cat. no. 222212117109) chip capacitor (chip capacitors: ATC type 100B - C - MSX - 500) power metal film resistor, PR52 type (cat. no. 232219231001) carbon resistor, CR68 type (cat. no. 23222141309) coupler model no. 10262 -3, range 125 - 250 MHz, Anaren Microwave Inc. 2 turns enamelled Cu wire (1 mm); int. diam. 5 mm; length 5 mm; leads 2 x 3 mm 5 turns closely wound enamelled Cu wire (1 mm); int. diam. 4.5 mm; leads 2 x 9 mm 60 stripline; w = 2 mm; l = 30 mm 30 stripline; w = 6 mm; l = 11 mm Cu strip (1 mm); l = 17 mm; h = 5 mm; w = 4 mm 30 stripline; w = 6 mm; l = 8 mm 30 stripline; w = 6 mm; l = 14 mm 30 stripline; w = 6 mm; l = 4 mm 2 turns closely wound Cu wire (1.5 mm); int. diam. 4.5 mm; leads 2 x 3 mm 30 stripline; w = 6 mm; l = 6 mm 50 stripline; w = 3 mm; l = 15 mm
The striplines are printed on double Cu-clad printed circuit board with epoxy fibre-glass dielectric (r = 4.5); thickness 1/16 inch.
1998 Mar 23
7
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Application Note ECO7904
handbook, full pagewidth
Vs (+ 27 V) R5 R6 D2 R7 C4 R1 e b c Vc Vce = 25 V TR1 BD136
C1
C2
D1 R2 R3
C3
R8
R9
Vb
R4
R10
,,,,,, ,,,,,,
BLV33
MGP997
handbook, full pagewidth
55
R5 C1 C2 R6 R7 Vs D2 72 R2 R1 D1 R3 R8 R9 R4 R10
MGP998
C4 C3 Vc e c b Vb
Fig.2 Class A bias circuit for a single transistor BLV33.
1998 Mar 23
8
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Table 5 Parts list: Class A bias circuit for a single transistor BLV33 R1 R2 R3 R4 R5 = R6 = R7 R8 = R9 R10 C1 = C3 C2 C4 D1 D2 T1 150 100 10 1000 1.8 180 33 100 nF 100 pF 10 F BZY 88 (3V3) BY 206 BD 136 carbon resistor CR25 type preset potentiometer CTP10 type carbon resistor CR25 type carbon resistor CR25 type rectangular wirewound resistor EH707 type carbon resistor CR25 type carbon resistor CR25 type metallized film capacitor ceramic capacitor 40 V electrolytic capacitor
Application Note ECO7904
1998 Mar 23
9
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Application Note ECO7904
handbook, full pagewidth
220
210
MGP989
Fig.3 P.C. Board and 2x BLV33 amplifier lay-out.
1998 Mar 23
10
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Application Note ECO7904
handbook, full pagewidth
16
MGP991
crossmod. (%) 0 dB 12 -20 dB -7 dB V (%) Po sync = 50 W
8 40 W
4
30 W
0 168
175
182
189
196
203
210
217
f (MHz)
224
handbook, full pagewidth
-44
MGP992
intermod. product (dB) -46 -48 -50 -52 -54 -56 -58 -60 -62 168
intermod. product
-8 dB
-16 dB
-7 dB
0 dB = Po sync
Po sync = 60 W
50 W 40 W
30 W 175 182 189 196 203 210 217 f (MHz) 224
Vision carrier level: -20 dB/0 dB. Sound carrier level: -7 dB. Sync level: 0 dB.
Fig.4 Crossmodulation and intermodulation products of the 2x BLV33 wideband Band III power amplifier.
1998 Mar 23
11
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Application Note ECO7904
handbook, halfpage
9
MGP993
(dB)
8.5
8
|S21|
7.5 130
150
170
190
210
230 250 (MHz)
a. Forward transducer gain.
MGP994
handbook, halfpage (dB)
0 -10 -20 -30 -40 -50 -60 130 150 170 190 210
V.S.W.R. 2 1.5 1.2 1.1
|S11|
230 250 (MHz)
b. Input voltage standing wave ratio.
Fig.5 2x BLV33 wideband Band III power amplifier.
1998 Mar 23
12
Philips Semiconductors
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
Application Note ECO7904
MGP995
handbook, halfpage (dB)
0 -10 -20 -30 -40 -50 -60 130 150 170 190 210 230 250 (MHz)
|S12|
a. Reverse transducer gain.
MGP996
handbook, halfpage (dB)
0 -10 -20 -30 -40 -50 -60 130 150 170 190 210
V.S.W.R. 2 1.5 1.2 1.1
|S22|
230 250 (MHz)
b. Output voltage standing wave ratio.
Fig.6 2x BLV33 wideband Band III power amplifier.
1998 Mar 23
13
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POWER DIVIDER BAND III WIDEBAND 50 POWER AMPLIFIER 50 D.U.T. 2x BLV33 HP778D DIRECT. COUPLER COAX SWITCH COAX SWITCH
Philips Semiconductors
50 50 ATT. (100W) 10 dB HP778D DIRECT. COUPLER ATT. 6 dB 50 3 dB - 180 HYBRID
handbook, full pagewidth
A wide-band class-A linear power amplifier (174 - 230 MHz) with two transistors BLV33
50
COAX SWITCH
8554L SPECTRUM ANALYZER
HP435A WATT METER
POWER DIVIDER
20 dB
ATT.
20 dB
ATT.
CD 50-4
ATT. 10 dB
ALC
14
SWOB III SWEEP S.M.L.U. SWEEP
6 dB
VAR. ATT.
CIRCULATOR RANGES: 170 to 200 MHz 190 to 230 MHz BLV33 AMPLIFIER
VAR. ATT. 10 dB S.M.L.U. R.F. GEN.
COAX DETECTOR
50
50
50 VAR. ATT. BLV33 AMPLIFIER 10 dB S.M.L.U. R.F. GEN.
PM5171 ALC S.M.L.U. R.F. GEN.
20 dB D.C. AMPLIFIER
50
50
50
50
50
VAR. ATT.
Application Note ECO7904
BLV33 AMPLIFIER 50 50 50
BLV33 AMPLIFIER
10 dB
S.M.L.U. R.F. GEN.
POWER SWEEP TEST SET-UP
170 to 230 MHz 3-TONE TEST SET-UP
MGP990
Fig.7 Test set up 2x BLV33 Band III power amplifier.
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
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Printed in The Netherlands
Date of release: 1998 Mar 23

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